Silicon fibers produced by high-pressure LCVD |
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Authors: | P C Nordine S C de la Veaux F T Wallenberger |
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Institution: | (1) Containerless Research Inc., 735 Carriage Way, 60015 Deerfield, IL, USA;(2) Experimental Station, Du Pont Central Research, P.O. Box 80304, 19880 Wilmington, DE, USA;(3) Department of Materials Science and Engineering, University of Illinois, 1304 West Green Street, 61801 Urbana, IL, USA |
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Abstract: | Using a unique fiber-growth control mechanism and high-reaction pressures (>1 bar), silicon fibers were grown by laser-assisted chemical vapor deposition (LCVD) from silane near the focal point of a cw Nd:YAG laser beam. Fiber-growth rates ranged from <1 to 500 m/s and fiber tip temperatures from 525 to 1412° C. At low fibertip temperatures (<600° C) silicon fibers yielding glassy fracture were obtained. Some crystallinity was observed by X-ray diffraction. Polycrystalline silicon fibers were formed at intermediate temperatures, single-crystal silicon fibers at high-laser intensities and high-tip temperatures. The single crystal LCVD silicon fibers were formed by a vapor-liquid-solid (VLS) mechanism. Single-crystal VLS-LCVD silicon fibers were also obtained from liquid silicon-metal alloys by initiating fiber growth from the end of thin palladium, gold and platinum wires. |
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Keywords: | 61 40 68 70 81 10 82 40 |
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