Deposition of highly oriented Bi12SiO20 thin films on Y-stabilized zirconia and SiO2 by pulsed-laser deposition |
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| Authors: | T Okada F Yahiro H Uetsuhara Y Nakata M Maeda S Higuchi and K Ueda |
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| Institution: | (1) State Key Lab of New Ceramics and Fine Processing, and Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P.R. China; |
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| Abstract: | We describe the deposition and characterization of Bi12SiO20 (bismuth silicon oxide; BSO) thin films on Y-stabilized zirconia (YSZ) and SiO2 glass substrates by pulsed-laser deposition (PLD) for the application of an electric field sensor. It was found that all films deposited on YSZ substrates heated at 400 °C and more were crystallized and the (310) plane was perpendicular to the substrate normal. The highly (310) oriented crystallized films were even deposited on SiO2 glass substrates, and this will make it possible to grow the crystallized films on the end surface of a SiO2 glass fiber. |
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