首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Effect of annealing time on the structural and ferromagnetic properties of the GaMnN thin films
Authors:Xingguo Gao  Baoyuan Man  Mei Liu  Cheng Yang  Chuansong Chen
Institution:1. College of Physics and Electronics, Shandong Normal University, Jinan, 250014, P.R. China
2. School of Science, Qilu University of Technology, Jinan, 250353, P.R. China
Abstract:GaMnN thin films were deposited on a sapphire (0001) substrate by using laser assisted molecular beam epitaxy. Subsequently, the samples were annealed in the ammonia ambience at 1000 °C for different time lengths. The crystalline quality was improved gradually, and the room temperature ferromagnetism of our samples becomes stronger with the increase of the annealing time within 25 min. The X-ray photoelectron spectra analysis confirmed that the Mn3+ concentration in the GaMnN films increased after annealing. The stronger ferromagnetism was observed in the sample with the higher Mn3+ concentration. However, too long annealing time, such as 35 min, will lead to the degradation of the crystalline quality and the decrease of Mn3+ concentration, which results in the weakened ferromagnetism. The optimal annealing time is 25 min at 1000 °C in our experiments. Finally, the origin of the room temperature ferromagnetism in our samples was discussed preliminarily.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号