Capacitance spectroscopic study of the Si/HF-electrolyte interface |
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Authors: | BK Patel SN Sahu |
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Institution: | (1) Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India, IN |
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Abstract: | Thep-Si/HF-electrolyte interface was characterized by capacitance–voltage (C–V) and current–voltage (I–V) studies. At low frequency, the measured capacitance exhibits two maxima: one in the weak accumulation regime (around 0.8 V
SCE]) and the other in the strong accumulation regime (around 2.6 V SCE]), both of which disappear at high frequency. The
disappearance of the two capacitance maxima is attributed to the slow response of interface traps to high frequencies. The
flat-band potential, VFB, is found to be frequency dependent. The surface state densities corresponding to the two capacitance maxima are estimated
to be 3.2×1011 cm-2 and 2.4×1011 cm-2, respectively. The in situ I–V characteristics distinguish pore formation, transition and electropolishing regions. Porous Si synthesized at 50 mA cm-2 gives a broad photoluminescence peak around 2.04 eV at 300 K.
Received: 4 September 2000 / Accepted: 9 February 2001 / Published online: 26 April 2001 |
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Keywords: | PACS: 98 80 Cq 61 30 Jf 12 39 Dc |
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