Controllable switching ratio in quantum dot/metal–metal oxide nanostructure based non-volatile memory device |
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Authors: | V Kannan J K Rhee |
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Institution: | 1. Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul, 100-715, Korea
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Abstract: | In this paper, we report a facile quantum dot/In?CInOx(nanostructure)/quantum dot/In based non-volatile resistive memory device. The solution processed tri-layer structure exhibited bipolar resistive switching with a ratio of 100 between the high-resistance state and low-resistance state. The memory device was stable and functional even after 100,000 cycles of operation and it exhibited good retention characteristics. The ON/OFF switching ratio could be controlled by choosing appropriate metal in the structure. Memory operating mechanism is discussed based on charge trapping in quantum dots with InOx acting as barrier. A comparative study of memory devices consisting of aluminum and titanium in place of indium is presented. The possible reason for the variation in ON/OFF ratio is discussed on the size of the nano-sized grains of the middle metal layer. |
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