Refracted X-ray Fluorescence (RXF) on Si single crystal and GaAs |
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| Authors: | Y C Sasaki K Hirokawa |
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| Institution: | (1) Department of Analytical Science, Institute for Materials Research, Tohoku University, Katahira 2-1-1, 980 Sendai, Japan |
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| Abstract: | The Refracted X-ray Fluorescence (RXF) method can obtain the information about surfaces and interfaces: for example, surface electron density, chemical condition and surface roughness. We evaluated surfaces and interfaces of ultrathin films by using RXF method, and we measured the average lattice constant of a ultrathin GaAs film, the top-layer of a GaAs substrate and the surface roughness of the Si substrate below a ultrathin GaAs film grown by MBE. |
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| Keywords: | 42 10 Fa 07 60 Hv 78 70 Ck |
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