Growth by laser ablation of Ti-based oxide films with different valency states |
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| Authors: | M Morcrette A Gutiérrez-Llorente A Laurent J Perrière P Barboux JP Boilot O Raymond T Brousse |
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| Institution: | (1) Groupe de Physique des Solides, CNRS UMR 17, Universités Paris VII et Paris VI, Tour 23, 2, Place Jussieu, 75251 Paris Cedex 05, France (Fax: +33-1/4354-2878, E-mail: perriere@gps.jussieu.fr), FR;(2) Physique de la Matière Condensée, CNRS URA 1254, Ecole Polytechnique, 91128 Palaiseau Cedex, France, FR;(3) Laboratoire de Génie des Matériaux, ISITEM, Rue Christian Pauc, BP 90604, 44306 Nantes Cedex 3, France, FR |
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| Abstract: | x La2/3+yTiO3-δ perovskite (with δ≤0.5) were deposited by the laser ablation technique from Li0.33La0.56TiO3 targets. Their growth onto MgO substrateswas studied as a function of the oxygen pressure. For films grown in vacuum (10-6 mbar), a La0.63TiO2.5 composition was obtained, meaning that Ti3+ alone is present in the films, while Li ions are not incorporated under these conditions. This material shows good electric
conductivity (ρ=500 mΩ cm). By contrast, insulating films with a Li0.1La0.70TiO3 composition corresponding to the Ti4+ species were obtained at high oxygen pressures (>0.05 mbar). For all conditions, textured films were grown with different
orientations depending on the temperature and the oxygen pressure.
Received: 10 September 1997/Accepted: 24 November 1997 |
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| Keywords: | PACS: 81 15 Fg 68 55 61 10 |
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