Etching nano-holes in silicon carbide using catalytic platinum nano-particles |
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Authors: | E Moyen W Wulfhekel W Lee A Leycuras K Nielsch U Gösele M Hanbücken |
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Institution: | (1) Campus de Luminy, CRMCN-CNRS, Case 913, 13288 Marseille, France;(2) Max-Planck-Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany;(3) CRHEA-CNRS, Rue Bernard Gregory, Sophia-Antipolis, 06560 Valbonne, France |
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Abstract: | The catalytic reaction of platinum during a hydrogen etching process has been used to perform controlled vertical nanopatterning of silicon carbide substrates. A first set of experiments was performed with platinum powder randomly distributed on the SiC surface. Subsequent hydrogen etching in a hot wall reactor caused local atomic hydrogen production at the catalyst resulting in local SiC etching and hole formation. Secondly, a highly regular and monosized distribution of Pt was obtained by sputter deposition of Pt through an Au membrane serving as a contact mask. After the lift-off of the mask, the hydrogen etching revealed the onset of well-controlled vertical patterned holes on the SiC surface. PACS 61.46.+w; 68.37.-d; 81.65.Cf |
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