Low-temperature growth of ZnO epitaxial films by metal organic chemical vapor deposition期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

按检索

Low-temperature growth of ZnO epitaxial films by metal organic chemical vapor deposition

Authors:	Email author" target="_blank">BP?Zhang Email author NT?Binh K?Wakatsuki N?Usami Y?Segawa

Institution:	(1) Photodynamics Research Center, The Institute of Physical and Chemical Research, RIKEN, 519-1399 Aoba, Aramaki, Aoba-ku, 980–0845 Sendai, Japan;(2) Department of Physics, Graduate School of Science, Tohoku University, 980-8578 Sendai, Japan;(3) Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan

Abstract:	ZnO films were grown on Al₂O₃ (0001) substrates by metal organic chemical vapor deposition at temperatures of T_g=150300 °C. Epitaxial growth was obtained for T_g200 °C. The in-plane orientation of the ZnO unit cells was found to change from a no-twist one with respect to that of the substrate at T_g=200 °C to a 30°-twist one at T_g=300 °C. Absorption and photoluminescence were observed from the film grown at 150 °C, although there was no evidence of epitaxial growth. Films grown at T_g200 °C exhibited smoother surfaces. Moreover, all the films grown at T_g=150300 °C revealed acceptor-related emission peaks, indicating the incorporation of acceptors into the films. PACS 81.15.Gh; 78.55.Et; 78.66.Hf

Keywords:
本文献已被 SpringerLink 等数据库收录！