Phosphorus distribution profiles in 100-silicon using a spin-on source at low temperatures

 Incorporation of phosphorus into silicon from a spin-on dopant layer (SOD) at 400 ^°C is described. Annealing experiments were carried out with SOD films deposited on (100) silicon substrates by using the spin-on technique. Conventional heating on a hotplate in normal atmosphere and a temperature range up to 400 ^°C was used to study the dopant incorporation. After removing the SOD-films one part of the silicon substrates was annealed at higher temperatures. Investigations were carried out by SIMS, SAM, XPS, HTEM, stripping Hall and Van der Pauw measurements before and after the high temperature annealing. Chemical phosphorus concentration profiles obtained from low temperature annealed samples showed diffusion depths of 60–80 nm (extrapolated to a substrate doping level of 10¹⁶ cm^-3) and surface concentrations of 10¹⁹–10²⁰ cm^-3. Electron concentration profiles exhibiting maximum values around 2⋅10¹⁹ cm^-3 could be measured on high temperature annealed samples only. Received: 28 March 1996/Accepted: 19 August 1996