The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer |
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| Authors: | XY Chen KH Wong CL Mak JM Liu XB Yin M Wang ZG Liu |
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| Institution: | (1) National Laboratory of Solid State Microstructures Physics Nanjing University, Nanjing 210093, P.R. China, CN;(2) Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, HK;(3) Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. China, CN |
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| Abstract: | Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find
that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111)
and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions
of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were
of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented,
(100)-oriented and polycrystalline LNO, respectively.
Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002 |
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| Keywords: | PACS: 68 55 Jk 81 15 Fg 81 05 Cy |
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