Annealing behavior ot trap-centers in silicon containing A-swirl defects |
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Authors: | H Lefèvre |
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Institution: | (1) Institut für Angewandte Physik, Universität Erlangen-Nürnberg, D-8520 Erlangen, Fed. Rep. Germany |
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Abstract: | The annealing behavior of trap-centers was studied in float-zone silicon wafers containing A-swirl defects. Samples from areas of high and low A-swirl density were annealed in nitrogen ambient between 100° and 900 °C, and analysed using the Deep Level Transient Spectroscopy. The results indicate, that two levels atE
c
}-0.07 eV,
n=4.6×10–16 cm2, andE
c–0.49eV,
n=6.6×10–16cm2 are caused by one defect, for which the silicon di-selfinterstitial is a likely interpretation. A level atE
c
}-0.11 eV was assigned to interstitial carbon. Both defects annealed out at about 170 °C. After 600 °C annealing an additional level atE
c–0.2 eV was detected, which was attributed to an interstitial silicon carbon complex. Heat treatment at 800 °C generated a new level atE
c–0.49 eV,
n=2.9×10–16cm2 only in the area of high A-swirl defect density. This level was also observed after oxidation and subsequent annealing of silicon. |
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Keywords: | 71 55F 61 70 73 40Q |
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