Preparation and crystallization of Pb(Zr0.95Ti0.05)O3 thin films deposited by radio-frequency magnetron sputtering with a stoichiometric ceramic target |
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Authors: | CJ Lu HM Shen YN Wang |
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Institution: | (1) National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R. China, CN |
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Abstract: | 0.95 Ti0.05)O3 (PZT 95/5) thin films of perovskite structure were prepared on various substrates by the radio-frequency magnetron sputtering
with a stoichiometric ceramic target. The crystal structure of the films showed a strong dependency on the crystal structure
of the substrates. After conventional-furnace annealing at 750 °C, crack-free and transparent epitaxial PZT 95/5 films were
successfully obtained on SrTiO3(100) substrates, and highly oriented films on LaAlO3(012). The films on r-sapphire exhibit slightly preferred orientation along both the (040) and (122) axes of the orthorhombic
PZT 95/5 phase. The films on YSZ(100) consist principally of the perovskite PZT 95/5 phase with random orientation with a small
portion of unknown phase. However, the formation of the perovskite PZT 95/5 phase was not observed in the films on Si(110)
or (111)Pt-coated Si substrates. The crystallization of the perovskite PZT 95/5 on these substrates could be improved by rapid
thermal annealing (RTA). Single perovskite phase was obtained in the films on (111)Pt/Si which had RTA at 750 °C for 1 min.
No tangible loss of Pb from the films occurred during either the sputtering or annealing.
Received: 17 April 1997/Accepted: 18 November 1997 |
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Keywords: | PACS: 68 55 77 55 81 15 |
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