An investigation of the Al2O3-CdSe interface in accumulation |
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| Authors: | A van Calster Li Yu-Min |
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| Institution: | (1) Laboratory of Electronics, Ghent State University, Ghent, Belgium;(2) Department of Physics, Nankai University, Tianjin, The People's Republic of China |
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| Abstract: | The Al2O3−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation.
The surface states are, most likely, located in the insulator Al2O3 with a concentration varying from 4·1018 to 1019 cm−3 eV−1. The surface states have a negligible influence on the thin-film transistor operation. |
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| Keywords: | 73 85 30 06 |
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