Generation and recombination in two-dimensional bipolar transistors |
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Authors: | Behnaz Gharekhanlou Sina Khorasani |
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Institution: | 1. School of Electrical Engineering, Sharif University of Technology, P. O. Box 11365-9363, Tehran, Iran
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Abstract: | We study the effects of recombination and generation process on the operation of bipolar junction transistor based on two-dimensional materials, and in particular, graphone. Here, we use Shockley–Read–Hall model to study these process. First, we investigate the current–voltage characteristics of a graphone p–n junction considering generation and recombination process. Then, we calculate the estimated changes in current gain, cutoff frequency, and output characteristics of a graphone bipolar junction transistor designed in a recent study. |
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