Room-temperature deposition of transparent conductive Al-doped ZnO thin films using low energy ion bombardment |
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| Authors: | C G Jin T Yu Z F Wu F Wang M Z Wu Y Y Wang Y M Yu L J Zhuge and X M Wu |
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| Institution: | (1) Department of Physics, Soochow University, Soochow, 215006, China;(2) The Key Laboratory of Thin Films of Jiangsu, Soochow University, Soochow, 215006, China;(3) Yancheng Institute of Technology, Yancheng, 224003, China;(4) Wenzheng College of Soochow University, Soochow, 215006, China;(5) Analysis and Testing Center, Soochow University, Soochow, 215006, China; |
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| Abstract: | Al-doped zinc oxide (AZO) films are prepared on quartz substrates by dual-ion-beam sputtering deposition at room temperature
(∼25°C). An assisting argon ion beam (ion energy E
i
=0–300 eV) directly bombards the substrate surface to modify the properties of AZO films. The effects of assisted-ion beam
energy on the characteristics of AZO films were investigated in terms of X-ray diffraction, atomic force microscopy, Raman
spectra, Hall measurement and optical transmittance. With increasing assisting-ion beam bombardment, AZO films have a strong
improved crystalline quality and increased radiation damage such as oxygen vacancies and zinc interstitials. The lowest resistivity
of 4.9×10−3Ω cm and highest transmittance of above 85% in the visible region were obtained under the assisting-ion beam energy 200 eV.
It was found that the bandgap of AZO films increased from 3.37 to 3.59 eV when the assisting-ion beam energy increased from
0 to 300 eV. |
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