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Electric-field-enhanced metal-induced crystallization of hydrogenated amorphous silicon at room temperature |
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| Authors: | I Pelant P Fojtík K Luterová J Ko?ka A Poruba J ?těpánek |
| Institution: | (1) Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 53 Praha 6, Czech Republic, CZ;(2) Technical University of Brno, Faculty of Chemistry, Purkyňova 118, 612 00 Brno, Czech Republic, CZ;(3) Charles University, Faculty of Mathematics and Physics, Ke Karlovu 3, 121 16 Praha 2, Czech Republic, CZ |
| Abstract: | A novel simple method of crystallization of hydrogenated amorphous silicon (a-Si:H) thin films is described. Namely, we studied a metal-induced crystallization enhanced by a dc electric field in sandwich p+–i–n+structures. The samples were fabricated from wide-bandgap a-Si:H with high hydrogen content (13–51 at. % H). Macroscopic islands of a-Si:H (up to ∼1 mm in diameter) in the region between upper (CrNi) and lower (ITO) contacts crystallize instantaneously when a sufficiently high dc electric field (≳105 V cm-1) is applied. The crystallization sets in at room temperature and ambient atmosphere and is spatially selective. A proposed microscopic mechanism of such an easy macroscopic crystallization consists in easy diffusion of Ni and/or Ni silicides (representing nucleation sites) through a dense network of voids in hydrogen-rich a-Si:H. Received: 30 November 2000 / Accepted: 3 May 2001 / Published online: 27 June 2001 |
| Keywords: | PACS: 81 30 Hd 73 61 Jc 78 60 Fi |
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