Optical and electrical studies of as-prepared and annealed Se-Te-Bi thin films |
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| Authors: | N Suri KS Bindra M Ahmad J Kumar R Thangaraj |
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| Institution: | (1) Semiconductors Laboratory, Department Applied Physics, Guru Nanak Dev University, Amritsar, Punjab, 143005, India |
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| Abstract: | The effect of thermal annealing on the electrical and optical properties of a thin film of Se-Te-Bi alloy has been studied.
It has been found that the mechanism of optical absorption follows a non-direct transition. The optical band-gap decreases
with an increase in the Bismuth concentration. The electrical conductivity of the as-deposited and annealed films has been
found to be of Arrhenius type. The results are discussed on the basis of rearrangements of defects and disorders in the chalcogenide
systems.
PACS 71.23.An; 73.61.-r; 73.61Jc; 74.25Gz; 78.66Jg |
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