Finite barrier width effects on exciton states and optical properties in wurtzite InGaN/GaN quantum well

Exciton states and optical properties in wurtzite (WZ) InGaN/GaN quantum well (QW) are investigated theoretically, considering finite barrier width and built-in electric field effects. Numerical results show that when the barrier width increases, the ground-state exciton binding energy, the interband transition energy and the integrated absorption probability increase first and then they are insensitive to the variation of the barrier width. For any barrier width, the ground-state exciton binding energy and the integrated absorption probability have a maximum when the well width is 1 nm; moreover, the integrated absorption probability goes to zero when the well width is larger than 6 nm. In addition, the competition effects between the built-in electric field and quantum confinement are also investigated in the WZ InGaN/GaN QW.