Strain-induced changes to the electronic structure of germanium |
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Authors: | Tahini H Chroneos A Grimes R W Schwingenschl?gl U Dimoulas A |
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Institution: | Department of Materials, Imperial College London, London, UK. h.tahini09@imperial.ac.uk |
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Abstract: | Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the 001], 110] and 111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the 111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. |
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