| 低温条件下半导体材料禁带宽度的测量 |
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| 引用本文： | 陆申龙,曹正东.低温条件下半导体材料禁带宽度的测量[J].大学物理,1996,15(10):37-39. |
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| 作者姓名： | 陆申龙 曹正东 |
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| 作者单位： | [1]复旦大学物理系 [2]同济大学物理系 |
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| 摘 要： | 介绍用硅三级管作为样品，在低温１５０Ｋ－２５０Ｋ范围内，测量其ＰＮ结正向特征，可精确求得玻耳兹曼常量及硅半导体材料禁带宽度的值。
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| 关 键 词： | 低温恒温器 玻耳兹曼常量 禁带宽度 半导体 |
MEASUREMENT OF THE ENERGY GAP FOR SEMICONDUCTOR MATERIALS AT LOW TEMPERATURE |
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| Lu Shenlong, Cao Zhengdong.MEASUREMENT OF THE ENERGY GAP FOR SEMICONDUCTOR MATERIALS AT LOW TEMPERATURE[J].College Physics,1996,15(10):37-39. |
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| Authors: | Lu Shenlong Cao Zhengdong |
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| Abstract: | The forward chacteristic data for the PN junction of a silicon transistor is measured atthe low temperature ranging from 150K to 250K.The accurate value of the Boltzmann constant and the energy gap of the silicon semiconductor are also obtained. |
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| Keywords: | low temperature thermostat the Boltzmann constant energygap |
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