|
|||||
|
|
A study on the self-interstitial structure of radiation damaged silicon by means of the double alignment channeling technique |
|
| Authors: | K Morita H D Carstanjen |
| Institution: | 1. Department of Physics , University of Munich , Munich, W Germany;2. University of Nagoya, Department of Crystalline Materials Science, Faculty of Engineering , Chigusa, Nagoya, Japan;3. Department of Physics , University of Munich , Munich, W Germany |
| Abstract: | The angular distribution of 2.8 MeV helium ions backscattered from silicon crystals containing self-interstitials has been calculated by channeling computer simulations for a double alignment channeling configuration. The structures of the self-interstitial defects are assumed to be the split <110> interstitial and the split <100> di-interstitial with various inter-atomic distances. The obtained profiles of the backscattering yield are found to show shapes characteristic for each structure which can be used for differentiating between these structures. When comparing these profiles with experimental profiles obtained with the same double alignment channeling configuration in a previous study one finds reasonable agreement for the split <110> interstitial defect with an inter-atomic distance of 1.76 Å. |
| Keywords: | F-center Alkali halides Mollow–Ivey relation Configuration coordinate model |