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A numerical model for the leakage characteristics in ferroelectric thin films under ionizing radiation |
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| Authors: | Shulei Sun Yichun Zhou Chuanlu Wu Jiancheng Li |
| Institution: | 1. Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, People's Republic of China;2. Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan, People's Republic of China;3. ASIC R&4. D Center, School of Electronic Science and Engineering, National University of Defense Technology, Changsha, People's Republic of China |
| Abstract: | A numerical model is developed to describe the leakage characteristics in ferroelectric thin films under ionizing radiation. The trap-controlled space-charge-limited conduction mechanism is modified by considering radiation-induced charge carriers and changes in the relative dielectric constant. The effect of dose rate is related to the changes in the carrier mobility. Numerical simulation using this model reveals a radiation hardness of 10 Mrad(Si) for barium strontium titanate (BST) thin films at a constant dose rate of 10 Krad(Si)/s. Differences in the leakage behavior under radiation for different conduction regions are also discussed. This model provides a useful tool in predicting the leakage behavior under ionizing radiation and estimating the radiation hardness for ferroelectric materials. |
| Keywords: | ferroelectric thin film ionizing radiation space-charge limited current |