| 重离子微束单粒子翻转与单粒子烧毁效应数值模拟 |
| |
| 引用本文： | 郭红霞,陈雨生,周辉,贺朝会,耿斌,李永宏.重离子微束单粒子翻转与单粒子烧毁效应数值模拟[J].计算物理,2003,20(5):434-438. |
| |
| 作者姓名： | 郭红霞 陈雨生 周辉 贺朝会 耿斌 李永宏 |
| |
| 作者单位： | 西北核技术研究所, 陕西 西安 710024 |
| |
| 摘 要： | 用束径0.4μm的微束重离子数值模拟了单粒子翻转SEU和单粒子烧毁效应SEB.单粒子翻转给出了不同离子注入后漏区的电压(电流)随时间变化规律;计算了CMOSSRAM电路的单粒子翻转;给出了收集电荷随LET值的变化曲线并给出了某一结构器件的临界电荷;VDMOS器件单粒子烧毁给出了不同时刻沿离子径迹场强、电位线、电流和碰撞离化率的变化.
|
| 关 键 词： | 重离子微束 单粒子翻转 单粒子烧毁 数值模拟 |
| 文章编号： | 1001-246X(2003)05-0434-05 |
| 收稿时间： | 2002-05-24 |
| 修稿时间： | 2002年5月24日 |
Numerical Simulation of Heavy Ion Microbeam for Effects of Single Event Upset and Single Event Burnout |
| |
| GUO Hong-xia,CHEN Yu-sheng,ZHOU Hui,HE Chao-hui,GENG Bin,LI Yong-hong.Numerical Simulation of Heavy Ion Microbeam for Effects of Single Event Upset and Single Event Burnout[J].Chinese Journal of Computational Physics,2003,20(5):434-438. |
| |
| Authors: | GUO Hong-xia CHEN Yu-sheng ZHOU Hui HE Chao-hui GENG Bin LI Yong-hong |
| |
| Institution: | Northwest Institute of Nuclear Technology, Xi'an 710024, China |
| |
| Abstract: | Effects of SEU and SEB are simulated with 0.4μm diameter microbeam. SEU for drain region of MOSFET and CMOS SRAM are calculated. Collective charge depending on LET for specific device structure is calculated for different ions. LET and critical charge are provided. SEB for VDMOS is simulated and electric field, potential line, current, rate of impact ionization are given at different times along ion tracks. It is very important for heavy microbeam test physics models which have been set up. |
| |
| Keywords: | heavy ion microbeam single event upset single event burnout numerical simulation |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《计算物理》浏览原始摘要信息 |
| 点击此处可从《计算物理》下载免费的PDF全文 |
