Scattering of conduction electrons by interface roughness in semiconductor heterostructures

A fluctuation transport theory is applied to describe the mobility limiting effect of interface roughness scattering in semiconductor heterostructures. As an example we consider a high mobility transistor and compare electron scattering by interface roughness with Coulomb scattering processes by ions and dipole fluctuations. We show that the dynamical resistivity measurement provides detailed information about the autocorrelation of the interface morphology.