Institution: | a Department of Electrical Engineering and Solid State Institute, Technion, Haifa 32000, Israel b Institut d’Électronique Fondamentale UMR CNRS 8622, Université Paris XI, 91405, Orsay, France c Department of Electrical and Electronic Engineering, College of Judea and Samaria, Ariel 44837, Israel |
Abstract: | Various structures of self-assembled Ge/Si quantum dot infrared photodetectors were implemented and investigated. The electronic structure of the QDIPs was studied by electrical and optical techniques including I–V characteristics, dark current, photoconductivity, photoluminescence, and photo-induced infrared absorption. The photoconductive spectra consist of a broad multi-peak, composed of peaks ranging from 70 to 220 meV. Their relative intensity changes with bias. Comparative dark current measurements were performed. Dark current limits the performance of this first generation of Ge/Si QDIPs. It is plausible that direct doping in the dot layer is a viable way of reducing the dark current. |