Enhancement of the electrical characteristics of indium–zinc tin-oxide thin-film transistors utilizing dual-channel layers |
| |
Institution: | 1. Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;2. Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Republic of Korea |
| |
Abstract: | Thin film transistors (TFTs) with indium–zinc tin-oxide (IZTO) dual-channel layers were fabricated on heavily-doped p-type Si substrates by using a tilted dual-target radio-frequency magnetron sputtering system. The number of oxygen vacancies in the IZTO channel layer decreased with increasing oxygen partial pressure, resulting in a decrease in the conductivity. The threshold voltage (Vth) shifted toward positive gate-source voltage with increasing oxygen partial pressure for the growth of the IZTO layer because of a decrease in the carrier concentration. The Vth, the mobility, the on/off-current ratio, and the subthreshold swing of the dual-channel IZTO TFTs were 3.5 V, 7.1 cm2/V s, 1.3 V/decade, and 8.2 × 106, respectively, which was enhanced by utilizing dual-channel layers consisting of a top channel deposited at a high oxygen partial pressure and a bottom channel deposited at a low oxygen partial pressure. |
| |
Keywords: | Indium–zinc tin-oxide thin-film transistor Dual-channel layer Threshold voltage Oxygen partial pressure |
本文献已被 ScienceDirect 等数据库收录! |
|