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Microwave-induced low-temperature crystallization of amorphous Si thin films |
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| Institution: | 1. Institute of Nanoscience and Nanotechnology (INN), NCSR “Demokritos”, 153 10 Agia Paraskevi, Attiki, Greece;2. Department of Chemical Engineering, NTUA, 15780 Zographou, Athens, Greece;3. Department of Electronics, Technological and Educational Institute of Pireaus, 12244 Aegaleo, Greece;4. Department of Chemical Engineering, University of Patras, 26504 Patras, Greece |
| Abstract: | Microwave heating was utilized for low-temperature crystallization of amorphous Si (a-Si) films. Microwave heating lowered the annealing temperature and reduced the annealing time. By microwave heating the hydrogen in the amorphous films was diffused out long before the nucleation of polycrystalline Si (poly-Si). The combination of NiCl2 coating on a-Si and microwave heating greatly reduced crystallization temperature. The combination of metal-induced crystallization and microwave-induced crystallization might be a useful technique to develop high-quality poly-Si films at low temperature. |
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