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Non-stoichiometry-induced metal-to-insulator transition in nickelate thin films grown by pulsed laser deposition
Institution:1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea;2. The Advanced Nano Surface Research Group, Korea Basic Science Institute, Daejeon, 34133, Republic of Korea;3. Department of Physics, Inha University, Incheon, 22212, Republic of Korea;4. Department of Electrical Engineering, Gachon University, Seongnam, 13120, Republic of Korea;5. Department of Physics, University of Ulsan, Ulsan, 44610, Republic of Korea
Abstract:While controlling the cation contents in perovskite rare-earth nickelate thin films, a metal-to-insulator phase transition is reported. Systematic control of cation stoichiometry has been achieved by manipulating the irradiation of excimer laser in pulsed laser deposition. Two rare-earth nickelate bilayer thin-film heterostructures with the controlled cation stoichiometry (i.e. stoichiometric and Ni-excessive) have been fabricated. It is found that the Ni-excessive nickelate film is structurally less dense than the stoichiometric film, albeit both of them are epitaxial and coherent with respect to the underlying substrate. More interestingly, as a temperature decreases, a metal-to-insulator transition is only observed in the Ni-excessive nickelate films, which can be associated with the enhanced disproportionation of the Ni charge valence. Based on our theoretical results, possible origins (e.g. anti-site defects) of the low-temperature insulating state are discussed with the need of future work for deeper understanding. Our work can be utilized to realize unusual physical phenomena (e.g. metal-to-insulator phase transitions) in complex oxide films by manipulating the chemical stoichiometry in pulsed laser deposition.
Keywords:Metal-to-insulator transition  Thin film  Nickelate  Pulsed laser deposition
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