ITO-free inverted organic solar cells fabricated with transparent and low resistance ZnO/Ag/ZnO multilayer electrode

Inverted organic solar cells (OSCs) based on poly (3-hexylthiophene) (P3HT):6,6]-phenyl-C61 butyric acid methyl ester (PCBM) bulk heterojunctions (BHJ) were fabricated with optimized ZnO/Ag/ZnO multilayer and conventional indium–tin oxide (ITO) cathode electrodes and their performance was compared. The ZnO/Ag/ZnO multilayer films showed sheet resistances in the range 3.6–3.9 Ω/sq, while ITO exhibited 14.2 Ω/sq. On the one hand, the carrier concentration gradually decreased from 1.74 × 10²² to 4.33 × 10²¹ cm^?3 as the ZnO thickness increased from 8 to 80 nm, respectively. The transmittance of the ZnO(40 nm)/Ag(19 nm)/ZnO(40 nm) films was ～95% at 550 nm, which is comparable to that of ITO (～96%). The multilayer films were smooth with a root mean square (RMS) roughness of 0.81 nm. OSCs fabricated with the ZnO(40 nm)/Ag(19 nm)/ZnO(40 nm) film showed a power conversion efficiency (2.63%) comparable to that of OSCs with a conventional ITO cathode (2.71%).