Pulsed Laser Ablation for Tin Dioxide: Nucleation,Growth, and Microstructures |
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| Authors: | Z W Chen C M L Wu C H Shek J K L Lai Z Jiao M H Wu |
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| Institution: | 1. Department of Physics and Materials Science , City University of Hong Kong , Tat Chee Avenue, Kowloon Tong, Hong Kong;2. Shanghai Applied Radiation Institute &3. Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering , Shanghai University , Shanghai, 200444, People's Republic of China;4. Department of Physics and Materials Science , City University of Hong Kong , Tat Chee Avenue, Kowloon Tong, Hong Kong;5. Shanghai Applied Radiation Institute & |
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| Abstract: | Pulsed-laser ablation approaches are being developed for the growth of oxide thin films as versatile platform for advanced applications. Semiconducting SnO 2 thin film is of fundamental importance in the advancement of microdevices. In this review, SnO 2 thin films of various microstructures have been made using the pulsed-laser deposition method. The microstructural aspects include tetragonal, porous, and orthorhombic structure characteristics. The quantum-dots and dynamic simulations of SnO 2 nanocrystals have blossomed into a submonolayer regime devoted to the nucleation and growth for these functional films. SnO 2 thin films with some of the microstructural features may have great implications for the development of novel prototype gas sensors and transparent conduction electrodes. |
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| Keywords: | SnO2 thin films Nanocrystals Pulsed-laser deposition Nucleation Growth Microstructure |
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