Molecular beam epitaxy of III–V semiconductors |
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| Authors: | Gary W Wicks |
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| Institution: | The Institute of Optics, University of Rochester , Rochester, NY |
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| Abstract: | Molecular beam epitaxy (MBE) has been instrumental in the advancement of the physics and technology of semiconductors that has occurred over the last few decades. The III-V material system has led the way in these new developments. This article discusses the technology of III-V MBE, highlights selected topics in its development, discusses growth mechanisms, and mentions possible future directions. |
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| Keywords: | molecular beam epitaxy semiconductor gallium arsenide |
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