Modification of the amorphous carbon films by the ns-laser irradiation |
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Authors: | Alfonsas Grigonis Liutauras Marcinauskas Vinga Vinciunaite and Gediminas Raciukaitis |
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Institution: | (1) AsiaSEED-Insitute, Tokyo, Japan;(2) Japan R&D Laboratory, University of Toronto, 3-15-10, Minami-Rokugo, Ota-City Tokyo, 144-0045, Japan;(3) Arakawa Chemical Co. Ltd., 1-1-9 Tsurumi, Osaka 538-0053, Japan;(4) Tokyo Metropolitan Industrial Research Institute, 1-20-20, Minami-Kamata, Ota-City Tokyo, 144-0035, Japan |
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Abstract: | The effect of a nanosecond laser irradiation of thin (60 and 145 nm) amorphous, diamond-like carbon films deposited on Si
substrate by an ion beam deposition (IBD) from pure acetylene and acetylene/hydrogen (1:2) gas mixture was analyzed in this
work. The films were irradiated with the infrared (IR) and ultraviolet (UV) radiation of the nanosecond Nd:YAG lasers working
at the first (1.16 eV) and the third (3.48 eV) harmonics, using a multi-shot regime. The IR laser irradiation stimulated a
minor increase in the fraction of sp2 bonds, causing a slight decrease in the hardness of the films and initiated SiC formation. Irradiation with the UV laser
caused the formation of carbides and increased hydrogenization of the Si substrate and the fraction of sp2 sites. Spalliation and ablation were observed at a higher energy density and with a large number of laser pulses per spot. |
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