| 摘 要： | A novel high-κ, Al_2O_3/HfO_2/Al_2O_3 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of ~4 V,a small leakage current density of ~2×10~(-6 Acm~(-2) at a gate voltage of 7 V, a high charge trapping density of 1.42 × 10~(13) cm~(-2) at a working voltage of ±10 V and good retention characteristics are observed. Furthermore, the programming(△V_(FB) = 2.8 V at 10 V for 10μs) and erasing speeds(△V_(FB)=-1.7 V at -10 V for 10μs) of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-κ, Al_2 O_3/HfO_2/Al_2 O_3 nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.
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