| AlGaN/GaN HEMTs with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization |
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| 作者姓名： | 郝智彪 郭天义 张李冲 罗毅 |
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| 作者单位： | State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsiughua University, Beijing 100084 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 60244001 and 60390074, the National Key Basic Research Special Foundation of China under Grant No TG2000036601, and the National High Technology Programme of China under Grant No 2003AA311132. |
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| 摘 要： | Novel AlGaN/GaN high electron mobility transistors （HEMTs） with an insulated gate have been demonstrated by oxidizing the surface of an AlGaN layer using inductively coupled O2 plasma. X-ray photoelectron spectroscopy measurement reveals that O2 plasma treatment can produce a thin oxidized layer on the AlGaN surface. The insulated-gate devices are realized by plasma oxidization before gate metallization. The reverse gate leakage current of the fabricated HEMT has been reduced in two orders of magnitude, and the cut-off frequency increases from 5.4 GHz to 6.5 GHz.
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| 关 键 词： | 绝热门 诱导耦合等离子氧化 高电子迁移率晶体管 AlGaN X射线光电光谱测量法 |
| 收稿时间： | 2005-08-23 |
| 修稿时间： | 2005-08-23 |
AlGaN/GaN HEMTs with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization |
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| HAO Zhi-Biao, GUO Tian-Yi, ZHANG Li-Chong, LUO Yi.AlGaN/GaN HEMTs with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization[J].Chinese Physics Letters,2006,23(2):497-499. |
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| Authors: | HAO Zhi-Biao GUO Tian-Yi ZHANG Li-Chong LUO Yi |
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