| Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/A1GaAs Quantum-Well Laser |
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| 作者姓名： | 曹玉莲 廉鹏 马文全 王青 吴旭明 何国荣 李慧 王小东 宋国峰 陈良惠 |
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| 作者单位： | [1]Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 [2]Department of Electronic Engineering, Beijing University of Technology, Beijing 100022 |
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| 摘 要： |
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| 关 键 词： | 插入层 量子阱激光器 X射线衍射 激光性能 |
| 收稿时间： | 2006-04-28 |
| 修稿时间： | 2006-04-28 |
Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/A1GaAs Quantum-Well Laser |
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| CAO Yu-Lian, LIAN Peng, MA WU Xu-Ming, HE Guo- Rong, SONG Guo-Feng, Wen-Quan, WANG Qing, LI Hui, WANG Xiao-Dong , CHEN Liang-Hui.Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/A1GaAs Quantum-Well Laser[J].Chinese Physics Letters,2006,23(9):2583-2586. |
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| Authors: | CAO Yu-Lian LIAN Peng MA WU Xu-Ming HE Guo- Rong SONG Guo-Feng Wen-Quan WANG Qing LI Hui WANG Xiao-Dong CHEN Liang-Hui |
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| Institution: | 1.Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2.Department of Electronic Engineering, Beijing University of Technology, Beijing 100022 |
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| Abstract: | We report on the use of very thin GaAsP insertion layers to improve the performance of an In GaAsP/InGaP/AIGaAs single quantum-well laser structure grown by metal organic chemical vapour deposition. Compared to the noninsertion structure, the full width at half maximum of photoluminescence spectrum of the insertion structure measured at room temperature is decreased from 47 to 38 nm indicating sharper interfaces. X-ray diffraction shows that the GaAsP insertion layers between AIGaAs and InGaP compensates for the compressive strain to improve the total interface. The laser performance of the insertion structure is significantly improved as compared with the counterpart without the insertion layers. The threshold current is decreased from 560 to 450 mA while the slope efficiency is increased from 0.61 to 0.7W/A and the output power is increased from 370 to 940mW. The slope efficiency improved is very high for the devices without coated facets. The improved laser performance is attributed to the suppression of indium carry-over due to the use of the GaAsP insertion layers. |
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