| Ahnormal Crystallization of Silicon Thin Films Deposited by ICP-CVD |
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| 作者姓名： | 栗军帅 尹旻 王金晓 贺德衍 |
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| 作者单位： | Department of Physics, Lanzhou University, Lanzhou 730000 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 10175030, and the Natural Science Foundation of Gansu Province under Grant No. 4WS035-A72-134. |
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| 摘 要： | Silicon thin films are deposited by inductively coupled plasma chemical vapour deposition （ICP-CVD） at a low temperature of 350℃ using a mixture of SiH4 and H2. The structures of the films are characterized by x-ray diffraction and Raman spectra. Under the optimum experimental conditions, we observe that the crystallinity of Si films becomes more excellent and the preferred orientation changes from （111） to （220） with the decreasing dilution of SiH4 in H2. Such an abnormal crystallization is tentatively interpreted in term of the high density, low electron temperature and spatial confinement of the plasma in the process of ICP-CVD.
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| 关 键 词： | 硅薄膜 ICP-CVD X射线衍射 拉曼光谱 |
| 收稿时间： | 2005-08-17 |
| 修稿时间： | 2005-08-17 |
Ahnormal Crystallization of Silicon Thin Films Deposited by ICP-CVD |
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| LI Jun-Shuai, YIN Min, WANG Jin-Xiao, HE De-Yan.Ahnormal Crystallization of Silicon Thin Films Deposited by ICP-CVD[J].Chinese Physics Letters,2005,22(12):3130-3132. |
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| Authors: | LI Jun-Shuai YIN Min WANG Jin-Xiao HE De-Yan |
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