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NiSi Film Synthesized by Isochronal Annealing in a Magnetron Sputtering System
作者姓名:岳双林  罗强  时成瑛  杨洪新  王强  徐鹏  顾长志
作者单位:Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
基金项目:Supported by the National Natural Science Foundation of China under Grant Nos 50472073 and 90406024-1, and the National Center for Nanoscience and Technology of China.
摘    要:By repeatedly pre-cleaning the sputtering chamber with Ar gas and in-situ isochronal annealing samples, NiSi films are successfully prepared on Si (100) substrates in a radio-frequency magnetron sputtering system. A comparison between the obtained NiSi and excess oxygen-contaminated Ni/Si films has been performed by EDX analysis of oxygen atomic content in both the films. Focused ion beam milling technology is employed to make the cross-sections of the samples for characterizing the NiSi film thickness and NiSi/Si interface roughness. The influences of nickel film thickness on the NiSi-film morphology and on the NiSi/Si interface roughness are studied.

关 键 词:NiSi薄膜  等时线退火  磁电管飞溅系统  氩气  薄膜物理学
收稿时间:2005-12-06
修稿时间:2005-12-06

NiSi Film Synthesized by Isochronal Annealing in a Magnetron Sputtering System
YUE Shuang-Lin, LUO Qiang, SHI Cheng-Ying, YANG Hong-Xin, WANG Qiang, XU Peng, GU Chang-Zhi.NiSi Film Synthesized by Isochronal Annealing in a Magnetron Sputtering System[J].Chinese Physics Letters,2006,23(3):678-681.
Authors:YUE Shuang-Lin  LUO Qiang  SHI Cheng-Ying  YANG Hong-Xin  WANG Qiang  XU Peng  GU Chang-Zhi
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