| Photodetachment of H^- near a Partially Reflecting Surface-Ⅰ |
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| 作者姓名： | A. Afaq |
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| 作者单位： | Department of Physics, COMSATS Institute of Information Technology Lahore, Pakistan |
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| 基金项目： | I would like to thank Professor M. L. Du for his useful discussion and comments. |
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| 摘 要： | Theoretical and interpretative study on the subject of photodetachment of H^- near a partially reflecting surface is presented, and the absorption effect of the surface is investigated on the total and differential cross sections using a theoretical imaging method. To understand the absorption effect, a reflection parameter K is introduced as a multiplicative factor to the outgoing detached-electron wave of H^- propagating towards the wall. The reflection parameter measures, how much electron wave would reflect from the surface; K = 0 corresponds to no reflection and K = 1 corresponds to the total reflection.
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| 关 键 词： | 光电分离 部分反射面 氢离子 核物理学 |
| 收稿时间： | 2007-09-17 |
Photodetachment of H- near a Partially Reflecting Surface---I |
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| A. Afaq.Photodetachment of H- near a Partially Reflecting Surface---I[J].Chinese Physics Letters,2008,25(2):475-478. |
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| Authors: | A Afaq |
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| Institution: | Department of Physics, COMSATS Institute of Information Technology Lahore, Pakistan |
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| Abstract: | Theoretical and interpretative study on the subject of photodetachment of H^- near a partially reflecting surface is presented, and the absorption effect of the surface is investigated on the total and differential cross sections using a theoretical imaging method. To understand the absorption effect, a reflection parameter K is introduced as a multiplicative factor to the outgoing detached-electron wave of H^- propagating towards the wall. The reflection parameter measures, how much electron wave would reflect from the surface; K = 0 corresponds to no reflection and K = 1 corresponds to the total reflection. |
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| Keywords: | 32 80 Gc |
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