InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer |
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Authors: | WANG Hui ZHU Ji-Hong JIANG De-Sheng ZHU Jian-Jun ZHAO De-Gang LIU Zong-Shun ZHANG Shu-Ming YANG Hui |
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Institution: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 100083Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 |
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Abstract: | Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD). The effect of the annealing temperature on the p-type behavior of Mg-doped InGaN is studied. It is found that the hole concentration in p-InGaN increases with a rising annealing temperature in the range of 600-850°C, while the hole mobility remains nearly unchanged until the annealing temperature increases up to 750°C, after which it decreases. On the basis of conductive p-type InGaN growth, the p-In0.1Ga0.9N/i-In0.1Ga0.9N/n-GaN junction structure is grown and fabricated into photodiodes. The spectral responsivity of the InGaN/GaN p-i-n photodiodes shows that the peak responsivity at zero bias is in the wavelength range 350-400nm. |
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Keywords: | 73 61 Ey 78 40 Fy |
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