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Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films
作者姓名:庞洪超  罗顺忠  龙兴贵  安竹  刘宁  段艳敏  吴兴春  杨本福  王培禄  郑思孝
作者单位:[1]Key laboratory of Radiation Physics and Technology of MOE, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064 [2]Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 321900
基金项目:Supported by the China Academy of Engineering Physics under Grant No 2003Z0501.
摘    要:Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition'parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of (002) crystal planes of the He-charged Ti film shifts to a lower angle and that of (100) crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.

关 键 词:基底温度  纳米晶态钛膜  氦原子  氦含量  显微结构  HeAr磁控管溅射沉积法
收稿时间:2006-03-13
修稿时间:2006-03-13

Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films
PANG Hong-Chao&sup,LUO Shun-Zhong&sup,LONG Xing-Gui&sup,AN Zhu&sup,LIU Ning&sup,DUAN Yan-Min&sup,WU Xing-Chun&sup,YANG Ben-Fu&sup,WANG Pei-Lu&sup,ZHENG Si-Xiao.Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films[J].Chinese Physics Letters,2006,23(12):3238-3241.
Authors:PANG Hong-Chao&sup  LUO Shun-Zhong&sup  LONG Xing-Gui&sup  AN Zhu&sup  LIU Ning&sup  DUAN Yan-Min&sup  WU Xing-Chun&sup  YANG Ben-Fu&sup  WANG Pei-Lu&sup  ZHENG Si-Xiao
Institution:1.Key laboratory of Radiation Physics and Technology of MOE, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064;2.Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 321900
Abstract:
Keywords:28  41  Qb  81  07  Bc  81  15  Cd
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