| Growth and Characterization of GaSb-Based Type-Ⅱ InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection |
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| 引用本文： | 王国伟,徐应强,郭杰,汤宝,任正伟,贺振宏,牛智川.Growth and Characterization of GaSb-Based Type-Ⅱ InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection[J].中国物理快报,2010,27(7):245-248. |
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| 作者姓名： | 王国伟 徐应强 郭杰 汤宝 任正伟 贺振宏 牛智川 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 60625405, and the National Basic Research Program of China under Grant Nos 2007CB936304 and 2010CB327601. |
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| 摘 要： | InAs/GaSb superlattiee （SL） midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb（001） residud p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/SML InAs/GaS5 SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 μm at 77K, the peak directivity of the detectors is 1.6 × 10^10 cm.Hz^1/2 W^-1 at 77K.
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| 关 键 词： | 分子束外延生长 GaSb 砷化铟 光电二极管 红外探测 红外光电探测器 超晶格 Ⅱ型 |
Growth and Characterization of GaSb-Based Type-Ⅱ InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection |
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| WANG Guo-Wei,XU Ying-Qiang,GUO Jie,TANG Bao,REN Zheng-Wei,HE Zhen-Hong,NIU Zhi-Chuan.Growth and Characterization of GaSb-Based Type-Ⅱ InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection[J].Chinese Physics Letters,2010,27(7):245-248. |
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| Authors: | WANG Guo-Wei XU Ying-Qiang GUO Jie TANG Bao REN Zheng-Wei HE Zhen-Hong NIU Zhi-Chuan |
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| Institution: | [1]State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 [2]Luoyang Opts-electronics Development Center, Luoyang 471009 |
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