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Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer
引用本文:王建峰,张宝顺,张纪才,朱建军,王玉田,陈俊,刘卫,江德生,姚端正,杨辉.Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer[J].中国物理快报,2006,23(9):2591-2594.
作者姓名:王建峰  张宝顺  张纪才  朱建军  王玉田  陈俊  刘卫  江德生  姚端正  杨辉
作者单位:[1]Department of Physics, Wuhan University, Wuhan 430072 [2]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
基金项目:Supported by the National Natural Science Foundation of China under Grant No 60476021.
摘    要:GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si(111) substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional (3D) mode to the 2I) one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy (TEM) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.

关 键 词:位错  硅衬底  媒介层  传送电子显微术  生长模式
收稿时间:2006-06-13
修稿时间:2006-06-13
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