Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates |
| |
引用本文: | 康琳,高炬,许华荣,赵少奇,陈红,吴培亨.Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates[J].中国物理快报,2007,24(12):3528-3531. |
| |
作者姓名: | 康琳 高炬 许华荣 赵少奇 陈红 吴培亨 |
| |
作者单位: | [1]Research Institute of Superconductor Electronics (RISE), Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093 [2]Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong [3]National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
| |
基金项目: | Supported by the National Basic Research Programme of China of China under Grant No 2006CB601006 and 2007CB310404, National High-tech R&D Programme of China under Grant No 2006AA12Z120, and the Research Grants Council (RGC) of Hong Kong (HKU7104/02P). |
| |
摘 要: | An epitsucial γ-Mg2SiO4 thin film can be a good buffer between the Si substrate and some oxide thin films. For high temperature superconducting multilayer structures, hopefully it can be taken as an insulating layer to replace the widely used MgO film. To explore such possibilities, we carry out systematic studies on the influences of pressure and substrate temperature on the epitaxy of γ-Mg2SiO4 thin films grown on Si (100) substrates using rf magnetron sputtering with an Mg target of purity of 99.95 percent. With the substrate temperature kept at 500℃ and the pressure changing from lO Pa to 15 Pa, in the XRD spectra the 7-Mg2SiO4 (400) peak grows drastically while the MgO (200) peak is suppressed. Keeping the pressure at 15Pa and increasing the temperature from 500℃ to 570℃ further can improve the film epitaxy, while working at 780℃ and 11Pa seems to give very good results. X-ray photoelectronic spectroscopy and φ scan are used to characterize the stoichiometry, crystallinity, and in-plane growth of the samples.
|
关 键 词: | γ-Mg2SiO4 薄膜 基底温度 缓冲器 |
收稿时间: | 2007-06-08 |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理快报》浏览原始摘要信息 |
| 点击此处可从《中国物理快报》下载免费的PDF全文 |
|