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Cation Effect on Copper Chemical Mechanical Polishing
Authors:WANG Liang-Yong  LIU Bo  SONG Zhi-Tang  FENG Song-Lin
Institution:Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050Graduate School of the Chinese Academy of Sciences, Beijing 100049
Abstract:We examine the effect of cations in solutions containing benzotriazole (BTA) and H2O2 on copper chemical mechanical polishing (CMP). On the base of atomic force microscopy (AFM) and material removal rate (MRR) results, it is found that ammonia shows the highest MRR as well as good surface after CMP, while KOH demonstrates the worst performance. These results reveal a mechanism that small molecules with lone-pairs rather than molecules with steric effect and common inorganic cations are better for copper CMP process, which is indirectly confirmed by open circuit potential (OCP).
Keywords:81  65  Ps
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