A Ferroelectric Domain-Wall Transistor |
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作者姓名: | 欧阳俊 孙杰 李一鸣 江安全 |
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作者单位: | State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University |
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基金项目: | supported by the National Key Basic Research Program of China (Grant No. 2019YFA0308500);;the National Natural Science Foundation of China (Grant No. 61904034); |
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摘 要: | On the basis of novel properties of ferroelectric conducting domain walls, the domain wall nanoelectronics emerges and provides a brand-new dimension for the development of high-density, high-speed and energy-efficient nanodevices. For in-memory computing, three-terminal devices with both logic and memory functions such as transistors purely based on ferroelectric domain walls are urgently required. Here, a prototype ferroelectric domain-wall transistor with a well-designed coplanar electrode ge...
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