| Preparation and Properties of GaN Films on GaAs Substrates |
| |
| 作者姓名： | 杨莺歌 马洪磊 马瑾 张亚非 |
| |
| 作者单位： | [1]KeyLaboratoryforThinFilmandMicrofabricationofMinistryofEducation,ResearchInstituteforMicro／NanometerScienceandTechnology,ShanghaiJiaoTongUniversity,Shanghai200030 [2]SchoolofPhysicsandMicroelectronics,ShandongUniversity,Jinan250100 |
| |
| 摘 要： | Polycrystalline gallium nitride films with hexagonal structure were prepared by a post-nitridation technique. A strong blue photoluminescence located at 458 nm and a UV photoluminescence located at 368 nm were observed at room temperature. The 368 nm peak is PL from band-edge emission. The blue luminescence is attributed to the transition from deep donor level to the valence band.
|
| 关 键 词： | 氮化镓薄膜 砷化镓基层 光电子材料 半导体材料 X射线衍射分析 束缚能 |
| 本文献已被 维普 等数据库收录！ |
|
