| Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors |
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| 作者姓名： | 王伟 石家纬 郭树旭 张宏梅 全宝富 马东阁 |
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| 作者单位： | [1]National Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130012 [2]State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 [3]Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 60176022, and the Natural Science Foundation of Jilin Province under Grant No 20020634. |
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| 摘 要： |
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| 关 键 词： | 改良性 双重绝缘子 功能薄膜晶体管 半导体物理 |
| 收稿时间： | 2006-08-01 |
| 修稿时间： | 2006-08-01 |
Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors |
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| WANG Wei, SHI Jia-Wei,GUO Shu-Xu, ZHANG Hong-Mei, QUAN Bao-Fu, MA Dong-Ge.Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors[J].Chinese Physics Letters,2006,23(11):3108-3110. |
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| Authors: | WANG Wei SHI Jia-Wei GUO Shu-Xu ZHANG Hong-Mei QUAN Bao-Fu MA Dong-Ge |
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| Institution: | 1. National Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130012; 2.State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022; 3 .Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
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| Abstract: | Organic thin film transistors based on pentacene are fabricated by the method of full evaporation. The thickness of insulator film can be controlled accurately, which influences the device operation voltage markedly. Compared to the devices with a single-insulator layer, the electric performance of devices by using a double-insulator as the gate dielectric has good improvement. It is found that the gate leakage current can be reduced over one order of magnitude, and the on-state current can be enhanced over one order of magnitude. The devices with double-insulator layer exhibit field-effect mobility as large as 0.14cm^2/Vs and near the zero threshold voltage. The results demonstrate that using a proper double insulator as the gate dielectrics is an effective method to fabricate OTFTs with high electrical performance. |
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