Piezoresistive Effect of Doped carbon Nanotube/Cellulose Films |
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引用本文: | 王万录,廖克俊,李勇,王永田.Piezoresistive Effect of Doped carbon Nanotube/Cellulose Films[J].中国物理快报,2003,20(9):1544-1547. |
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作者姓名: | 王万录 廖克俊 李勇 王永田 |
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作者单位: | [1]KeyLaboratoryofEducationMinistryforPhotoelectronTechnologyandSystem,ChongqingUniversity,Chongqing400044 [2]DepartmentofAppliedPhysics,ChongqingUniversity,Chongqing400044 |
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摘 要: | The strain-induced resistance changes in iodine-doped and undoped carbon nanotube films were investigated by a three-point bending test. Carbon nanotubes were fabricated by hot filament chemical vapour deposition. The experimental results showed that there has a striking piezoresistive effect in carbon nanotube films. The gauge factor for I-doped and undoped carbon nanotube films under 500 microstrain was about 125 and 65 respectively at room temperature, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the piezoresistivity in the films may be ascribed to a strain-induced change in the band gap for the doped tubes and to the intertube contact resistance for the undoped tubes.
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关 键 词: | 碳纳米管/纤维素薄膜 离子掺杂 压阻效应 化学气相沉积 半导体材料 |
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