| Strained and Piezoelectric Characteristics of Nitride Quantum Dots |
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| 作者姓名： | 吕燕伍 蔡琳 梁双 |
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| 作者单位： | [1]Department of Physics, Beijing Jiaotong University, Beijing 100044 [2]School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 60376014. |
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| 摘 要： | The deformation potential and piezoelectric field in nitride GaN/AIN quantum dots （QDs） are investigated in the framework of effective mass approximation （EMA） and finite element method （FEM）. The strained fields and piezoelectric characteristics are studied by using FEM for GaN/AIN QDs （GaN embedded in AIN） in the shape of truncated hexagonal pyramids. We presented the calculated results of the electronic states, wave functions, QD strain field distribution and piezoelectric effects in the QDs. Effects of spontaneous and piezoelectric polarization are taken into account in the calculation. The theoretical results are dependent on QD shapes and sizes. Some of them make the GaN/AIN QDs interesting candidates in optoelectronic applications.
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| 关 键 词： | 压电性 氮化物量子点 形变势能 有限元素法 |
| 收稿时间： | 2005-01-04 |
| 修稿时间： | 2005-01-04 |
Strained and Piezoelectric Characteristics of Nitride Quantum Dots |
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| LU Yan-Wu, CAI Lin, LIANG Shuang.Strained and Piezoelectric Characteristics of Nitride Quantum Dots[J].Chinese Physics Letters,2006,23(4):956-959. |
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| Authors: | LU Yan-Wu CAI Lin LIANG Shuang |
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